inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1309 description high dc current gain :h fe = 2000(min) @ i c = 3a collector-emitter sustaining voltage- :v ceo(sus) = 100v (min) low collector-emitter saturation voltage- :v ce( sat ) = 1.5v (max) @ i c = 3a applications designed for audio frequency amplifier and low-speed switching industrial use. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 7 v i c collector current 8 a i cm collector current-peak 12 a i b b base current 0.8 a collector power dissipation @t c =25 40 p c collector power dissipation @t a =25 1.5 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1309 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 10ma; i b = 0 100 v v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 3ma b 1.5 v v be (sat) base-emitter saturation voltage i c = 3a; i b = 3ma b 2.0 v i cbo collector cutoff current v cb = 100v; i e = 0 1.0 a i ebo emitter cutoff current v eb = 5v; i c = 0 5 ma h fe-1 dc current gain i c = 3a; v ce = 2v 2000 15000 h fe-2 dc current gain i c = 5a ; v ce = 2v 500 t on turn-on time 1.0 s t stg storage time 3.5 s t f fall time i c = 3a ,r l = 16.7 , i b1 = -i b2 = 3ma,v cc 50v 1.2 s ? h fe- 1 classifications m l k 2000-5000 3000-7000 5000-15000 isc website www.iscsemi.cn
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